IPS042G Datasheet, PDF (2/10 Pages) International Rectifier – DUAL FULLY PROTECTED POWER MOSFET SWITCH

I³¹PS042G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25^oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm
copper thickness.
Symbol Parameter
Min.
Vds
Maximum drain to source voltage
—
Vin
Maximum input voltage
-0.3
Iin, _max Maximum IN current
-10
Isd _cont. Diode max. continuous current ⁽¹⁾
(for all Isd mosfets, rth=125^oC/W)
—
Isd _pulsed Diode max. pulsed current ⁽¹⁾
—
Pd
Maximum power dissipation⁽¹⁾
(for all Pd mosfets, rth=125^oC/W)
—
ESD1 Electrostatic discharge voltage (Human Body) —
ESD2 Electrostatic discharge voltage (Machine Model) —
T _stor. Max. storage temperature
-55
Tj max. Max. junction temperature
-40
Max.
47
7
+10
Units
V
mA
Test Conditions
1.2
A
3
1
W
4
C=100pF, R=1500Ω,
kV
0.5
C=200pF, R=0Ω, L=10µH
150
o_C
+150
Thermal Characteristics
Symbol Parameter
Rth1
Thermal resistance with standard footprint
(2 mosfets on)
Rth2
Rth3
Thermal resistance with standard footprint
(1 mosfet on)
Thermal resistance with 1" square footprint
(2 mosfets on)
Min. Typ. Max. Units Test Conditions
—
100
—
—
125
— ^oC/W
—
65
—
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds _(max) Continuous Drain to Source voltage
VIH
High level input voltage
VIL
Low level input voltage
Ids
Continuous drain current (both mosfets at this current)
Tamb=85^oC
TAmbient = 85^oC, IN = 5V, rth = 100^oC/W, Tj = 125^oC
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc ⁽²⁾ Max. frequency in short circuit condition (Vcc = 14V)
—
35
4
6
V
0
0.5
—
0.53
A
1
5
kΩ
—
1
µS
0
1
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
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