AUIRFZ44Z Datasheet, PDF (2/14 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFZ44Z/ZS
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆ΒV_DSS/∆T_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
55
–––
–––
–––
0.054
–––
–––
11.1
13.9
2.0
–––
4.0
V
V/°C
mΩ
V
V_GS = 0V, I_D = 250µA
f ^{Reference to 25°C, ID = 1mA}
V_GS = 10V, I_D = 31A
V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
22
–––
–––
S V_DS = 25V, I_D = 31A
I_DSS
Drain-to-Source Leakage Current
–––
–––
20
µA V_DS = 55V, V_GS = 0V
–––
–––
250
V_DS = 55V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA V_GS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
Q_g
Total Gate Charge
–––
29
43
nC I_D = 31A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
–––
7.2
11
–––
12
18
f ^{VDS = 44V}
V_GS = 10V
t_d(on)
Turn-On Delay Time
–––
14
–––
ns V_DD = 28V
t_r
Rise Time
–––
68
–––
I_D = 31A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
–––
33
–––
–––
41
–––
f ^{RG = 15Ω}
V_GS = 10V
L_D
Internal Drain Inductance
–––
4.5
–––
nH Between lead,
D
L_S
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
G
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
1420
–––
–––
240
–––
–––
130
–––
–––
830
–––
–––
190
–––
–––
300
–––
and center of die contact
S
pF V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 44V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 44V
Diode Characteristics
Parameter
I_S
Continuous Source Current
Min. Typ. Max. Units
Conditions
–––
–––
51
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
A showing the
–––
–––
200
integral reverse
G
–––
–––
1.2
V
f ^{p-n junction diode.}
S
T_J = 25°C, I_S = 31A, V_GS = 0V
–––
23
–––
17
35
26
f ^{ns TJ = 25°C, IF = 31A, VDD = 28V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L =0.18mH,
R_G = 25Ω, I_AS = 31A, V_GS =10V. Part not
recommended for use above this value.
ƒ I_SD ≤ 31A, di/dt ≤ 840A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C.
„ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS .
† Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population, starting
T_J = 25°C, L =0.18mH, R_G = 25Ω, I_AS = 31A, V_GS =10V.
ˆ This is applied to D²Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
‰ R_θ is rated at T_J of approximately 90°C.
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