AUIRFS4010 Datasheet, PDF (2/13 Pages) International Rectifier – Automotive applications

AUIRFS/SL4010
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Min.
100
–––
–––
2.0
189
R_G
Internal Gate Resistance
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
–––
Gate-to-Source Charge
–––
Gate-to-Drain ("Miller") Charge
–––
Total Gate Charge Sync. (Q_g - Q_gd)
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
h Effective Output Capacitance (Energy Related) –––
g Effective Output Capacitance (Time Related) –––
Typ.
–––
0.10
3.9
–––
–––
2.0
–––
–––
–––
–––
Typ.
143
38
50
93
21
86
100
77
9575
660
270
757
1112
Max. Units
Conditions
–––
–––
4.7
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 106A
4.0 V V_DS = V_GS, I_D = 250μA
––– S V_DS = 25V, I_D = 106A
––– Ω
20
250
μA
V_DS = 100V, V_GS = 0V
V_DS = 100V, V_GS = 0V, T_J = 125°C
100
-100
nA
V_GS = 20V
V_GS = -20V
Max. Units
Conditions
215
I_D = 106A
f ^{–––}
–––
nC
V_DS = 50V
V_GS = 10V
–––
I_D = 106A, V_DS =0V, V_GS = 10V
–––
V_DD = 65V
–––
–––
–––
ns
I_D = 106A
f ^{RG = 2.7Ω}
V_GS = 10V
–––
V_GS = 0V
–––
V_DS = 50V
––– pF ƒ = 1.0MHz See Fig.5
–––
–––
h V_GS = 0V, V_DS = 0V to 80V See Fig.11
g V_GS = 0V, V_DS = 0V to 80V
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 180
––– ––– 720
––– ––– 1.3
MOSFET symbol
D
showing the
A _{integral reverse}
G
p-n junction diode.
S
f V T_J = 25°C, I_S = 106A, V_GS = 0V
––– 72 –––
––– 81 –––
––– 210 –––
––– 268 –––
ns
T_J = 25°C
T_J = 125°C
nC
T_J = 25°C
T_J = 125°C
V_R = 85V,
f ^{IF = 106A}
di/dt = 100A/μs
––– 5.3 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.057mH
R_G = 25Ω, I_AS = 106A, V_GS =10V. Part not recommended for use
above this value .
ƒ I_SD ≤ 106A, di/dt ≤ 1319A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
‰ R_θJC value shown is at time zero.
2
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