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AUIRFR9024N Datasheet, PDF (2/13 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUIRFR/U9024N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55 âââ âââ
V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
âââ
âââ
f -0.05 âââ V/°C Reference to 25°C, ID = -1mA
âââ 0.175 ⦠VGS = -10V, ID = -6.6A
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-2.0 âââ -4.0
2.5 âââ âââ
V
S
h VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
IDSS
Drain-to-Source Leakage Current
âââ âââ -25 µA VDS = -55V, VGS = 0V
âââ âââ -250
VDS = -44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = -20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
âââ âââ 19
ID = -7.2A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ âââ
âââ âââ
5.1
10
fh nC VDS = -44V
VGS = -10V,See Fig 6 and 13
td(on)
Turn-On Delay Time
âââ 13 âââ
VDD = -28V
tr
Rise Time
âââ 55 âââ
ID = -7.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
23
37
âââ
âââ
Ãfh ns RG = 24 â¦
RD = 3.7â¦, See Fig.10
LD
Internal Drain Inductance
LS
Internal Source Inductance
Between lead,
âââ 4.5 âââ
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
and center of die contact
D
G
S
Ciss
Input Capacitance
âââ 350 âââ
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
âââ 170 âââ
âââ 92 âââ
h pF VDS = -25V
Æ = 1.0MHz,see Fig.5
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ -11
A showing the
âââ âââ -44
âââ âââ -1.6
integral reverse
G
S
f p-n junction diode.
V TJ = 25°C, IS = -7.2A, VGS = 0V
âââ
âââ
47
84
71
130
fh ns TJ = 25°C, IF = -7.2A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Starting TJ = 25°C, L = 2.8mH
RG = 25â¦, IAS = -6.6A (See Figure 12)
 ISD ⤠-6.6A, di/dt ⤠-240A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
ÂPulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
 Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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