AUIRFR5505 Datasheet, PDF (2/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFR/U5505
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
-55 ––– –––
––– -0.049 –––
––– ––– 0.11
V
V/°C
Ω
V_GS = 0V, I_D = -250µA
f ^{Reference to 25°C, ID = -1mA}
V_GS = -10V, I_D = -9.6A
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
-2.0 ––– -4.0
4.2 ––– –––
V
S
h ^{VDS = VGS, ID = -250µA}
V_DS = -25V, I_D = -9.6A
I_DSS
Drain-to-Source Leakage Current
––– ––– -25 µA V_DS = -55V, V_GS = 0V
––– ––– -250
V_DS = -44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = -20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = 20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– ––– 32
I_D = -9.6A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– –––
––– –––
7.1
15
f nC VDS = -44V
V_GS = -10V,See Fig 6 and 13
t_d(on)
Turn-On Delay Time
––– 12 –––
V_DD = -28V
t_r
Rise Time
––– 28 –––
I_D = -9.6A
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
–––
–––
20
16
–––
–––
Ãf ns RG = 2.6 Ω
R_D = 2.8Ω, See Fig.10
L_D
Internal Drain Inductance
Between lead,
––– 4.5 –––
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
C_iss
Input Capacitance
––– 650 –––
V_GS = 0V
C_oss
Output Capacitance
––– 270 ––– pF V_DS = -25V
C_rss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz,see Fig.5
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -18
D
A showing the
––– ––– -64
––– ––– -1.6
integral reverse
G
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = -9.6A, V_GS = 0V
––– 51
77
––– 110 160
f ^{ns TJ = 25°C, IF = -9.6A}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 2.8mH
R_G = 25Ω, I_AS = -6.6A (See Figure 12)
ƒ I_SD ≤ -6.6A, di/dt ≤ -240A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„Pulse width ≤ 300µs; duty cycle ≤ 2%.
… This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact.
† Uses IRF9Z24N data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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