AUIRFR5305 Datasheet, PDF (2/13 Pages) International Rectifier – AUTOMOTIVE MOSFET

AUIRFR/U5305
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
V_(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
∆V_(BR)DSS/∆T_J
Breakdown Voltage Temp. Coefficient
–––
-0.034
–––
R_DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.065
V_GS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
gfs
Forward Transconductance
8.0
–––
–––
I_DSS
Drain-to-Source Leakage Current
–––
–––
-25
–––
–––
-250
I_GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V_GS = 0V, I_D = -250µA
f ^{Reference to 25°C, ID = -1mA}
V_GS = -10V, I_D = -16A
h ^{VDS = VGS, ID = -250µA}
V_DS = -25V, I_D = -16A
V_DS = -55V, V_GS = 0V
V_DS = -44V, V_GS = 0V, T_J = 150°C
V_GS = -20V
V_GS = 20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max.
Q_g
Total Gate Charge
–––
–––
63
Q_gs
Gate-to-Source Charge
–––
–––
13
Q_gd
Gate-to-Drain ("Miller") Charge
–––
–––
29
t_d(on)
Turn-On Delay Time
–––
14
–––
t_r
Rise Time
–––
66
–––
t_d(off)
Turn-Off Delay Time
–––
39
–––
t_f
Fall Time
–––
63
–––
L_D
Internal Drain Inductance
–––
4.5
–––
L_S
Internal Source Inductance
–––
7.5
–––
C_iss
Input Capacitance
–––
1200
–––
C_oss
Output Capacitance
–––
520
–––
C_rss
Reverse Transfer Capacitance
–––
250
–––
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
71
170
Max.
-31
-110
-1.3
110
250
Units
nC
ns
nH
pF
Conditions
I_D = -16A
fh ^{VDS = -44V}
V_GS = -10V See Fig.6 and 13
V_DD = -28V
I_D = -16A
fh ^{RG = 6.8 Ω}
R_D = 1.6 Ω See Fig.10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
h ^{VDS = -25V}
ƒ = 1.0MHz,see Fig.5
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
f ^{p-n junction diode.}
S
T_J = 25°C, I_S = -16A, V_GS = 0V
fh ^{TJ = 25°C, IF = -16A}
di/dt = 100A/µs
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See Fig. 11)
‚ V_DD = -25V, starting T_J = 25°C, L = 2.1mH
R_G = 25Ω, I_AS = -16A. (See Figure 12)
ƒ I_SD ≤ -16A, di/dt ≤ -280A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
… This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact.
† Uses IRF5305 data and test conditions.
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
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