AUIRFP064N Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUIRFP064N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
55 ––– ––– V VGS = 0V, ID = 250μA
f ^{––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA}
––– ––– 0.008 Ω VGS = 10V, ID = 59A
2.0 ––– 4.0
42 ––– –––
f ^{V VDS = VGS, ID = 250μA}
S VDS = 25V, ID = 59A
I_DSS
Drain-to-Source Leakage Current
––– ––– 25
μA ^{VDS = 55V, VGS = 0V}
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– ––– 170
I_D = 59A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 32
––– ––– 74
f nC VDS = 44V
V_GS = 10V,See Fig.6 and 13
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 28V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 100 –––
––– 43 –––
––– 70 –––
ns ^{ID = 59A}
f ^{RG = 2.5Ω}
R_D = 0.39Ω,See Fig.10
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– 5.0 –––
Between lead,
D
6mm (0.25in.)
nH
from package
G
––– 13 –––
and center of die contact
S
C_iss
Input Capacitance
––– 4000 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1300 ––– pF VDS = 25V
C_rss
Reverse Transfer Capacitance
––– 480 –––
ƒ = 1.0MHz,See Fig.5
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
g ––– ––– 110
MOSFET symbol
showing the
A
integral reverse
––– ––– 390
––– ––– 1.3
f ^{p-n junction diode.}
V TJ = 25°C, IS = 59A, VGS = 0V
–––
–––
110 170
450 680
f ^{ns TJ = 25°C, IF = 59A}
nC di/dt = 100A/μs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ V_DD = 25V, starting T_J = 25°C, L = 190μH,
R_G = 25Ω, I_AS = 59A.(See Figure 12)
ƒ I_SD ≤ 59A, di/dt ≤ 290A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C
„Pulse width ≤ 300µs; duty cycle ≤ 2%
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refere to Desing Tip # 93-4
2
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