AUIRF7640S2TR Datasheet, PDF (2/11 Pages) International Rectifier – DirectFET Power MOSFET

AUIRF7640S2TR/TR1
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BV_DSS
ΔΒV_DSS/ΔT_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
60 ––– ––– V VGS = 0V, ID = 250μA
–––
–––
0.1
27
i ^{––– V/°C Reference to 25°C, ID = 1mA}
36 mΩ VGS = 10V, ID = 13A
3.0 4.0 5.0
V VDS = VGS, ID = 25μA
ΔV_GS(th)/ΔT_J
gfs
Gate Threshold Voltage Coefficient
Forward Transconductance
––– -11 ––– mV/°C
9.3 ––– ––– S VDS = 50V, ID = 13A
R_G
Gate Resistance
––– 3.5 5.0 Ω
I_DSS
Drain-to-Source Leakage Current
––– ––– 5
μA VDS = 60V, VGS = 0V
––– ––– 250
V_DS = 48V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Characteristics @ T_J = 25°C (unless otherwise stated)
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
––– 7.3 11
––– 1.5 –––
V_DS = 30V
––– 0.9 ––– nC VGS = 10V
––– 3.0 –––
I_D = 13A
––– 1.9 –––
See Fig. 6 and 17
––– 3.9 –––
–––
–––
5.3
4.0
–––
–––
Ãi nC VDS = 16V, VGS = 0V
V_DD = 30V, V_GS = 10V
––– 12 –––
I_D = 13A
––– 6.3 ––– ns R_G=6.8Ω
––– 6.2 –––
––– 450 –––
––– 160 –––
V_GS = 0V
pF VDS = 25V
C_rss
Reverse Transfer Capacitance
––– 48 –––
ƒ = 1.0MHz
C_oss
Output Capacitance
––– 610 –––
V_GS = 0V, V_DS = 1.0V, f=1.0MHz
C_oss
Output Capacitance
––– 120 –––
V_GS = 0V, V_DS = 48V, f=1.0MHz
Diode Characteristics @ T_J = 25°C (unless otherwise stated)
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 21
MOSFET symbol
D
(Body Diode)
A showing the
I_SM
Ãg ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 84
––– ––– 1.3
––– 26 39
––– 24 36
integral reverse
G
i ^{p-n junction diode.}
S
V TJ = 25°C, IS = 13A, VGS = 0V
i ^{ns TJ = 25°C, IF = 13A, VDD = 25V}
nC di/dt = 100A/μs
ƒ Surface mounted on 1 in. square Cu
(still air).
Notes  through Š are on page 3
2
‰ Mounted to a PCB with small
clip heatsink (still air)
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
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