AUIRF2903ZS Datasheet, PDF (2/14 Pages) International Rectifier – Advanced Process Technology Low On-Resistance

AUIRF2903ZS/ZL
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
gfs
I_DSS
I_GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
––– –––
V VGS = 0V, ID = 250μA
–––
–––
0.021
1.9
–––
2.4
e ^{V/°C Reference to 25°C, ID = 1mA}
mΩ ^VGS ^{= 10V, I}D ^{= 75A **}
2.0 ––– 4.0
V VDS = VGS, ID = 150μA
120 ––– –––
S VDS = 10V, ID = 75A**
––– ––– 20
––– ––– 250
μA ^{VDS = 30V, VGS = 0V}
V_DS = 30V, V_GS = 0V, T_J = 125°C
––– ––– 200
nA ^{VGS = 20V}
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– 160 240
I_D = 75A**
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
51
58
–––
–––
e nC VDS = 24V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 24 –––
V_DD = 15V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 100 –––
––– 48 –––
––– 37 –––
ns
I_D = 75A**
e ^{RG = 3.2 Ω}
V_GS = 10V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
––– 4.5 –––
Between lead,
nH ^{6mm (0.25in.)}
––– 7.5 –––
from package
and center of die contact
D
G
S
C_iss
Input Capacitance
––– 6320 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1980 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
––– 1100 –––
––– 5930 –––
ƒ = 1.0MHz
pF
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
C_oss
C_oss eff.
Output Capacitance
Effective Output Capacitance
––– 2010 –––
––– 3050 –––
f ^{VGS = 0V, VDS = 24V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 24V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Ù ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
k ––– ––– 160
MOSFET symbol
D
A showing the
integral reverse
G
––– ––– 1020
––– ––– 1.3
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 75A**, V_GS = 0V
S
––– 34
––– 29
51
44
e ^{ns TJ = 25°C, IF = 75A**, VDD = 15V}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.10mH
R_G = 25Ω, I_AS = 75A, V_GS =10V. Part not
recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ C_oss eff. is a fixed capacitance that gives the
same charging time as C_oss while V_DS is rising
from 0 to 80% V_DSS .
… Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value determined from sample failure population. 100%
tested to this value in production.
‡ This is applied to D²Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C
‰ Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 160A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements.
** All AC and DC test condition based on former Package limited
current of 75A.
2
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