AUIRF2805S Datasheet, PDF (2/14 Pages) International Rectifier – Advanced Planar Technology

AUIRF2805S/L
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 ––– –––
V V_GS = 0V, I_D = 250μA
––– 0.06 ––– V/°C Reference to 25°C, I_D = 1mA
–––
3.9
4.7
f mΩ V_GS = 10V, I_D = 104A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
91 ––– –––
S V_DS = 25V, I_D = 104A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
μA V_DS = 55V, V_GS = 0V
––– ––– 250
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 200 nA V_GS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– 150 230
I_D = 104A
Q_gs
Gate-to-Source Charge
––– 38
57
nC V_DS = 44V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 52
78
f V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 28V
t_r
Rise Time
––– 120 –––
I_D = 104A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 68 –––
––– 110 –––
ns R_G = 2.5Ω
Ãf V_GS = 10V
L_D
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
Between lead,
G
and center of die contact
S
C_iss
Input Capacitance
––– 5110 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1190 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 210 –––
ƒ = 1.0MHz, See Fig.5
C_oss
Output Capacitance
––– 6470 –––
pF
V_GS = 0V, V_DS = 1.0V, ƒ =1.0MHz
C_oss
C_{oss eff.}
g ^{Output Capacitance}
Effective Output Capacitance
––– 860 –––
––– 1600 –––
V_GS = 0V, V_DS = 44V, ƒ =1.0MHz
V_GS = 0V, V_DS = 0V to 44V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
h ––– ––– 175
MOSFET symbol
D
A showing the
––– ––– 700
––– ––– 1.3
integral reverse
G
V
f ^{p-n junction diode.}
T_J = 25°C, I_S = 104A, V_GS = 0V
S
–––
–––
80 120
290 430
f ^{ns TJ = 25°C, IF = 104A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.08mH, R_G = 25Ω, I_AS = 104A.
(See Figure 12).
ƒ I_SD ≤ 104A, di/dt ≤ 240A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging
time as C_oss while V_DS is rising from 0 to 80% V_DSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ This value determined from sample failure population
Starting T_J = 25°C, L = 0.08mH, R_G = 25Ω, I_AS = 104A.
‰ When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
2
www.irf.com