20BQ030PBF Datasheet, PDF (2/8 Pages) Vishay Siliconix – Schottky Rectifier, 2 A

20BQ030PbF
Bulletin PD-20787 rev. A 09/05
Voltage Ratings
Part number
V_R Max. DC Reverse Voltage (V)
V_RWM Max. Working Peak Reverse Voltage (V)
20BQ030PbF
30
Absolute Maximum Ratings
Parameters
20BQ Units
Conditions
I_F(AV) Max. Average Forward Current
2.0
I_FSM Max. Peak One Cycle Non-Repetitive 350
Surge Current
80
E_AS Non-Repetitive Avalanche Energy
3.0
I_AR Repetitive Avalanche Current
1.0
A 50% duty cycle @ T_L = 119 °C, rectangular wave form.
5µs Sine or 3µs Rect. pulse ^{Following any rated}
load condition and
10ms Sine or 6ms Rect. pulse _{with rated VRRM applied}
mJ T_J = 25 °C, I_AS = 1A, L = 6mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by T_J max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
20BQ
V_FM Max. Forward Voltage Drop (1)
V_FM Max. Forward Voltage Drop (1)
I_RM Max. Reverse Leakage Current (1)
0.470
0.550
0.370
0.470
0.5
15
C_T Max. Junction Capacitance
L_S Typical Series Inductance
dv/dt Max. Voltage Rate of Change
200
2.0
10000
(Rated V_R)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Units
Conditions
V @ 2A
V @ 4A
T_J = 25 °C
V @ 2A
V @ 4A
T_J = 125 °C
mA T_J = 25 °C
mA T_J = 125 °C
V_R = rated V_R
pF V_R = 5V_DC, (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs
Parameters
20BQ Units
Conditions
T_J Max.Junction Temperature Range (*) - 55 to 150 °C
T_stg Max. Storage Temperature Range - 55 to 150 °C
R_thJL
Max. Thermal Resistance Junction
to Lead
(**)
25
°C/W DC operation
R_thJA Max. Thermal Resistance Junction
to Ambient
80 °C/W
wt Approximate Weight
0.10(0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR2E
(*) dPtot
1
dTj ^< Rth( j-a) ^{thermal runaway condition for a diode on its own heatsink}
(**) Mounted 1 inch square PCB
Document Number: 94157
www.vishay.com
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