IRGIB7B60KDPBF Datasheet, PDF (11/12 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

600
500
400
300
200
100
0
-100
12
tf
10
Vce
8
90% Ice
6
5% Vce
4
5% Ice
2
Ice
0
Eoff Loss
-2
-200
-4
0
0.2 0.4 0.6 0.8
1
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ T_J = 150°C using Fig. CT.4
100
0
-100
-200
-300
-400
Peak
I_RR
15
Q_RR
10
t_RR
5
0
10%
-5
Peak
IRR
-10
-500
-15
-600
-0.15 -0.05 0.05
0.15
-20
0.25
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ T_J = 150°C using Fig. CT.4
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IRGIB7B60KDPbF
600
24
500
20
tr _Vce
Ice
400
16
90% Ice
10% Ice
300
12
200
8
100
4
5% Vce
0
-100
0.3
Eon
Loss
0.5
0.7
Time (uS)
0
-4
0.9
Fig. WF2- Typ. Turn-on Loss Waveform
@ T_J = 150°C using Fig. CT.4
400
80
350
300
60
250
200
40
150
100
20
50
0
0.00
10.00
20.00 30.00
Time (uS)
40.00
0
50.00
Fig. WF4- Typ. S.C Waveform
@ T_C = 150°C using Fig. CT.3
11