IRFB33N15D Datasheet, PDF (11/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)

IRFB/IRFS/IRFSL33N15D
D²Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
TRL
10.90 (.429)
10.70 (.421)
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4
330.00
(14.173)
MAX.
6 0.0 0 (2.36 2)
M IN .
Notes:
NO TES :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting T_J = 25°C, L = 1.7mH
R_G = 25Ω, I_AS = 20A.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
ƒ I_SD ≤ 20A, di/dt ≤ 280A/µs, V_DD ≤ V_(BR)DSS,
† This is only applied to TO-220AB package
T_J ≤ 175°C
‡ This is applied to D²Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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Data and specifications subject to change without notice. 6/00
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