IRG4RC10SD Datasheet, PDF (10/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

IRG4RC10SD
Notes:
Q Repetitive rating: V_GE=20V; pulse width limited by maximum junction temperature (figure 20)
RV_CC=80%(V_CES), V_GE=20V, L=10µH, R_G = 100W (figure 19)
SPulse width ≤ 80µs; duty factor ≤ 0.1%.
TPulse width 5.0µs, single shot.
Tape & Reel Information
TO-252AA
TR
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .47 6 )
11.9 ( .46 9 )
FEED DIR ECTIO N
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1 . C O NT RO LLIN G DIM EN SIO N : M ILLIM ETER.
2 . ALL D IM EN SIO N S ARE SHO W N IN M ILLIM ETERS ( IN CH ES ).
3 . O U TLINE C O N FO R M S TO EIA-481 & EIA-541.
FEED D IREC TIO N
13 INC H
NOTES :
1. O U TLINE CO N FO R M S TO EIA-481.
16 mm
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Data and specifications subject to change without notice. 12/00
10
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