IRG4IBC20UD Datasheet, PDF (10/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4IBC20UD
Notes:
Q Repetitive rating: V_GE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
R V_CC=80%(V_CES), V_GE=20V, L=10µH, R_G = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
U t = 60s, f = 60Hz
Case Outline — TO-220 FULLPAK
1 6.00 (.6 30)
1 5.80 (.6 22)
1 3.70 (.5 40)
1 3.50 (.5 30)
1 0.6 0 (.4 17)
1 0.4 0 (.4 09)
ø
3.40 (.133)
3.10 (.123)
-A-
3.70 (.145)
3.20 (.126)
4.80 (.189)
4.60 (.181)
7 .10 (.28 0)
6 .70 (.26 3)
12 3
1.1 5 (.0 45)
M IN .
3.30 (.130)
3.10 (.122)
-B-
3X ^{1.40 (.055)}
1.05 (.042)
2 .54 (.10 0)
2X
0.90 (.035)
3X _{0.70 (.028)}
0 .25 (.01 0)
M AM B
2.80 (.110)
2.60 (.102)
LLEEAADD AASSSSIIGGMN EMNETNST ^S
1- G1A-TGEA ^{T E}
2- C2O-LDLREACITNOR
3- E3M-ITSTOEURR C E
NOTES:
1 D IM E N S IO N IN G & TO LE R A N C IN G
P ER ANSI Y14.5M , 1982
2 C O N T R O LLIN G D IM E N S IO N : IN C H .
0.48 (.019)
3X _{0.44 (.017)}
2.85 (.112)
2.65 (.104)
C
D
A
B
M IN IM U M C R E E P A G E
D IS T A N C E B E T W E E N
A -B -C -D = 4.8 0 (.1 89 )
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Data and specifications subject to change without notice. 4/00
10
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