IRG4BC30UD Datasheet, PDF (10/10 Pages) International Rectifier – INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

IRG4BC30UD
Notes:
Q Repetitive rating: V_GE=20V; pulse width limited by maximum junction temperature
(figure 20)
R V_CC=80%(V_CES), V_GE=20V, L=10µH, R_G = 23Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
Case Outline — TO-220AB
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
10.54 (.415)
10.29 (.405)
3.78 (.149)
3.54 (.139)
-A-
6.47 (.255)
4 ^{6.10 (.240)}
123
1.15 (.045)
M IN
3
X
3.96
3.55
(.160)
(.140)
4.06 (.160)
3.55 (.140)
4.69 (.185)
4.20 (.165)
-B -
1.32 (.052)
1.22 (.048)
NOTES:
1 DIM ENSIONS & TOLERANCING
PER ANSI Y14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 DIM ENSIONS ARE SHO W N
M ILLIM ETER S (IN CHES ).
4 CO NFO RM S TO JEDEC OU TLINE
T O -2 2 0 A B .
LEAD ASSIGNM ENTS
1 - GATE
2 - COLLE CTO R
3 - EM ITTER
4 - COLLE CTO R
3
X
1.40
1.15
(.055)
(.045)
2.54 (.100)
2X
3
X
0.93
0.69
(.037)
(.027)
0.36 (.014) M B A M
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
CONFORMS TO JEDEC OUTLINE TO-220AB
D im ens ions in M illim eters and (Inc hes)
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Data and specifications subject to change without notice. 4/00
10
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