SI4420DYPBF_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 95729
Si4420DYPbF
l N-Channel MOSFET
l Low On-Resistance
S
l Low Gate Charge
l Surface Mount
S
l Logic Level Drive
S
l Lead-Free
G
Description
This N-channel HEXFET^® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
HEXFET^® Power MOSFET
AA
1
8
D
2
7
D
3
6
D
4
5
D
Top View
V_DSS = 30V
R_DS(on) = 0.009Ω
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
30
±12.5
±10
±50
2.5
1.6
0.02
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
8/11/04