SI3443DVTRPBF Datasheet, PDF (1/7 Pages) International Rectifier – Ultra Low On-Resistance

l Ultra Low On-Resistance
l P-Channel MOSFET
D
l Surface Mount
D
l Available in Tape & Reel
l -2.5V Rated
l Lead-Free
G
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET^® power MOSFET with R_DS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R_DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
PD-95240
Si3443DVPbF
HEXFET^® Power MOSFET
A
1
6
D
V_DSS = -20V
2
5
D
3
4
S
Top View
R_DS(on) = 0.065Ω
TSOP-6
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
08/31/05