RFR3410TRLPBF Datasheet, PDF (1/11 Pages) International Rectifier – High frequency DC-DC converters

Applications
l High frequency DC-DC converters
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD - 95514A
IRFR3410PbF
IRFU3410PbF
HEXFET^® Power MOSFET
V_DSS
100V
R_DS(on) max
39mΩ
I_D
31A^†
D-Pak
IRFR3410
I-Pak
IRFU3410
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through † are on page 10
www.irf.com
Max.
100
± 20
31†
22
125
110
3.0
0.71
15
-55 to + 175
300 (1.6mm from case )
Units
V
A
W
mW°C
V/ns
°C
Typ.
–––
–––
–––
Max.
1.4
40
110
Units
°C/W
1
12/03/04