English
Language : 

OM6517SA_15 Datasheet, PDF (1/2 Pages) International Rectifier – Isolated IGBTs In A Hermetic Package
OM6517SA
OM6526SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
1000 Volt, 15 And 20 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available Screened To MIL-S-19500, TX, TXV and S Levels
• Ceramic Feedthroughs Available
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
IC (Cont.)
V(BR)CES
VCE (sat) (Typ.) Tf (Typ.)
qJC
PD
NUMBER @ 90°C, A
V
V
ns
°C/W
W
OM6517SA
20
1000
4.0
300
1.0
125
OM6526SA
15
1000
4.0
300
1.5
85
SCHEMATIC
Collector
Gate
Emitter
.290
.125
2 PLCS.
.940
.740
.540
Z-Pak
MECHANICAL OUTLINE
.200
.100
2 PLCS.
.260
MAX
.040
.144 DIA.
.545
.535
.250
.125 DIA.
2 PLS.
.540
.685
.665
.800
.790
TO-254
.500
MIN.
.550
.510
.150
.300
.040 DIA.
3 PLCS.
.150
.045
.035
.150 TYP.
PACKAGE OPTIONS
TJ
°C
150
150
.050
.040
.550
.530
.005
.150 TYP.
.260
.249
3.1
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 157