OM6516SC_15 Datasheet, PDF (1/2 Pages) International Rectifier – Isolated IGBTs In A Hermetic Package

INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-258AA PACKAGE
OM6516SC
OM6520SC
1000 Volt, 25 Amp, N-Channel IGBT
In A Hermetic Metal Package
FEATURES
• Isolated IGBTs In A Hermetic Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• High Switching Speed
• Low Tail Current
• Available With Free Wheeling Diode
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features the high switching speeds of a power MOSFET
and the low on-resistance of a bipolar transistor. It is ideally suited for high power
switching applications such as frequency converters for 3Ø motors, UPS and high
power SMPS.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
PART
NUMBER
OM6516SC
OM6520SC
I_C (Cont.)
@ 90°C, A
25
25
V_(BR)CES
V
1000
1000
V_{CE (sat)} (Typ.)
V
4.0
4.0
T_f (Typ.)
ns
300
300
q_JC
°C/W
1.0
1.0
P_D
T_J
W
°C
125
150
125
150
SCHEMATICS
Collector
Collector
MECHANICAL OUTLINE
.695
.165
.685
.155
.270
.240
.045
.035
Gate
Emitter
OM6516SC
Gate
.835
.815
.707
.697
123
.550
CEG
.530
Emitter
OM6520SC(w/Diode)
.750
.500
.200 TYP.
PACKAGE OPTIONS
.065
.055
.140 TYP.
.092 MAX.
.005
3.1
4 11 R2
Supersedes 2 07 R1
MOD PAK
NOTE: IGBTs are also available in Z-Tab, dual and quad
pak styles - Please call the factory for more information.
6 PIN SIP
3.1 - 155