MBR1100 Datasheet, PDF (1/5 Pages) ON Semiconductor – SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE 100 VOLTS

Bulletin PD-20587 rev. B 03/03
SCHOTTKY RECTIFIER
MBR1100
1.0 Amp
Major Ratings and Characteristics
Characteristics
I_F(AV) Rectangular
waveform
V_RRM
I_FSM @ tp = 5 µs sine
MBR1100 Units
1.0
A
100
V
200
A
V_F @ 1 Apk, T_J = 125°C
0.68
V
T_J range
- 40 to 150 °C
Description/ Features
The MBR1100 axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
www.irf.com
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1