KBPC6005 Datasheet, PDF (1/4 Pages) Shanghai Sunrise Electronics – SINGLE PHASE SILICON BRIDGE RECTIFIER

Bulletin U2790 09/05
KBPC6PbF SERIES
KBPC8PbF SERIES
6A, 8A Single Phase Rectifier Bridge
• Suitable for printed circuit board
or chasis mounting
• Compact construction
• High surge current capability
~
• Fully characterised data
• Wide temperature range
~
• Lead-Free ("PbF" suffix)
+
I_O(av) = 6A, 8 A
I_O(av)
-
V_RRM range
50 to 1000V
Description
The KBPC6PbF, KBPC8PbF Series of Single Phase Rectifier
Bridges consists of four silicon junctions connected as a full
bridge. These devices are intended for general use in industrial
and consumer equipment.
Electrical Specification
I_O
Maximum DC output
current
I_FSM Maximum peak one
cycle, non-repetitive
surge current
I²t Maximum I²t capability
for fusing
I²âˆšt
V_FM
I_RM
V_RRM
Maximum I²âˆšt
capability for fusing
Maximum peak forward
voltage per diode
Typical peak reverse
leakage per diode
Maximum repetitive peak
reverse voltage range
KBPC6 KBPC8 Units Conditions
6
8.0
A T_C = 50^oC, Resistive or inductive load
4.7
6.4
A T_C = 50^oC, Capacitive load
125 125 A t = 10ms, 20ms Following any rated
137 137 A t = 8.3ms, 16.7ms load condition and with
78
78 A²s t = 10ms
71
71 A²s t = 8.3ms
110 110 A²s t = 10ms
100 100 A²s t = 8.3ms
rated V_RRM reapplied
Initial T_J = T_J max
100% V_RRM reapplied
Initial T_J = T_J max
no voltage reapplied
1105 1105 A²âˆšs t = 0.1 to 10ms, no voltage reapplied
1.2
1.0
10
10
1.0
1.0
50 to 1000
V I_FM = 3.0A, T_J = 25^oC
µA T_J = 25^oC, 100% V_RRM
mA T_J = 150^oC, 100% V_RRM
V
Thermal and Mechanical Specifications
T_J
T_stg
R_thJC
W
Operating and storage
temperature range
Thermal resistance,
junctions to case
Approximate weight
KBPC6 KBPC8 Units Conditions
-55 to 150
°C
6
K/W
6(0.21)
g(oz)
Document Number: 94360
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