JANTX2N6849 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

PD - 90550D
IRFF9130
JANTX2N6849
REPETITIVE AVALANCHE AND dv/dt RATED
H E X F E T ^T R A N S I S T O R S
JANTXV2N6849
JANS2N6849
THRU-HOLE (TO-205AF)
REF:MIL-PRF-19500/564
Product Summary
100V, P-CHANNEL
Part Number BVDSS RDS(on) ID
IRFF9130 -100V 0.30Ω -6.5A
The HEXFET^technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = -10V, TC = 25°C
ID @ VGS = -10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
-6.5
-4.1
A
-25
25
W
0.20
W/°C
±20
V
92
mJ
—
A
—
mJ
-5.5
V/ns
-55 to 150
o_C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
www.irf.com
1
04/20/01