JANTX2N6800_15 Datasheet, PDF (1/7 Pages) International Rectifier – Repetitive Avalanche Ratings

PD-90432D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^®TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number BVDSS RDS(on)
IRFF330
400V 1.0Ω
ID
3.0A
IRFF330
JANTX2N6800
JANTXV2N6800
REF:MIL-PRF-19500/557
400V, N-CHANNEL
The HEXFET^®technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique
processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with
high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
3.0
2.0
12
25
0.20
A
W
W/°C
VGS
Gate-to-Source Voltage
±20
EAS
Single Pulse Avalanche Energy Á
191
IAR
Avalanche Current À
3.0
EAR
Repetitive Avalanche Energy À
2.5
dv/dt
Peak Diode Recovery dv/dt Â
4.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
Weight
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/27/15