JANTX2N6782 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)

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Provisional Data Sheet No. PD-9.423B
JANTX2N6782
HEXFET^® POWER MOSFET
JANTXV2N6782
[REF:MIL-PRF-19500/556]
[GENERIC:IRFF110]
N-CHANNEL
100 Volt, 0.60Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6782
JANTXV2N6782
100V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
0.60Ω
ID
3.5A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6782, JANTXV2N6782 Units
3.5
2.25
A
14
15
W
0.12
W/K 
±20
V
5.5
V/ns
-55 to 150
300 (0.063 in. (1.6mm) from o_C
case for 10.5 seconds)
0.98 (typical)
g
To Order