JANTX2N6764 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

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Provisional Data Sheet No. PD-9.337E
JANTX2N6764
HEXFET^® POWER MOSFET
JANTXV2N6764
[REF:MIL-PRF-19500/543]
[GENERIC:IRF150]
N-CHANNEL
100 Volt, 0.055Ω HEXFET
Product Summary
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
Part Number
JANTX2N6764
JANTXV2N6764
BVDSS
100V
RDS(on)
ID
0.055Ω 38A
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, and high
energy pulse circuits, and virtually any application where
high reliability is required.
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6764, JANTXV2N6764 Units
38
24
A
152
150
W
1.2
W/K 
±20
V
150
mJ
38
A
15
mJ
5.5
-55 to 150
V/ns
o_C
300 (0.063 in. (1.6mm) from
case for 10 seconds)
11.5 (typical)
g