JANTX2N6762 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)

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Provisional Data Sheet No. PD-9.336E
JANTX2N6762
HEXFET^® POWER MOSFET
JANTXV2N6762
[REF:MIL-PRF-19500/542]
[GENERIC:IRF430]
N-CHANNEL
500 Volt, 1.5Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-estab-
lish advantages of MOSFETs, such as voltage control,
very fast switching, ease of paralleling and electrical
parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, and
high energy pulse circuits, and virtually any application
where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6768
JANTXV2N6768
500V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.5Ω
ID
4.5A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6762, JANTXV2N6762 Units
4.5
3.0
A
18
75
W
0.60
W/K 
±20
V
1.1
mJ
4.5
A
—
mJ
3.5
V/ns
-55 to 150
o_C
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
g