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JANTX2N6760 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)
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Provisional Data Sheet No. PD-9.335E
JANTX2N6760
HEXFET® POWER MOSFET
JANTXV2N6760
[REF:MIL-PRF-19500/542]
[GENERIC:IRF330]
N-CHANNEL
400 Volt, 1.00Ω HEXFET
Product Summary
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors.The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
Part Number
JANTX2N6760
JANTXV2N6760
BVDSS
400V
RDS(on)
1.00Ω
ID
5.5A
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current Œ
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6760, JANTXV2N6760 Units
5.5
3.5
A
22
75
W
0.60
W/K 
±20
V
1.7
mJ
5.5
A
—
mJ
4.0
V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
g