JANTX2N6756 Datasheet, PDF (1/6 Pages) International Rectifier – POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)

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Provisional Data Sheet No. PD-9.333E
JANTX2N6756
HEXFET^® POWER MOSFET
JANTXV2N6756
[REF:MIL-PRF-19500/542]
[GENERIC:IRF130]
N-CHANNEL
100 Volt, 0.18Ω HEXFET
Product Summary
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
Part Number
JANTX2N6756
JANTXV2N6756
BVDSS
100V
RDS(on)
0.18Ω
ID
14A
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current Œ
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
JANTX2N6756, JANTXV2N6756 Units
14
9
A
56
75
W
0.60
W/K 
±20
V
75
mJ
14
A
7.5
mJ
5.5
-55 to 150
V/ns
o_C
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
g