IRSF3031 Datasheet, PDF (1/5 Pages) International Rectifier – FULLY PROTECTED DMOS POWER SWITCH(Vds=50V, Rds(on)=200mohm)

Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD 6.069A
IRSF3031
FULLY PROTECTED DMOS POWER SWITCH
Features
s Extremely Rugged for Harsh Operating Environments
s Over Temperature Protection
s Over Current Protection
s Active Drain-to-Source Clamp
s ESD Protection
s Compatible with Standard Power MOSFET
s Low Operating Input Current
s Monolithic Construction
s Dual Set/Reset Threshold Input
Description
The IRSF3031 is a three-terminal monolithic SMART POWER MOS-
FET with built-in short circuit, over-temperature, ESD and over-voltage
protections and dual set/reset threshold input.
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 4A (typical) or the junction temperature ex-
ceeds 165°C (typical) and keeps it off until the input is driven below the
Reset Threshold voltage. The drain-to-source voltage is actively
clamped at 55V (typical) prior to the avalanche of the power MOSFET,
thus improving its performance during turn-off with inductive loads.
The input requirements are very low (100µA typical) which makes the
IRSF3031 compatible with most existing designs based on standard
power MOSFETs.
Absolute Maximum Ratings
Vds(clamp)
Rds(on)
Ids(sd)
Tj(sd)
EAS
50 V
200 mΩ
1.8 A
165^oC
200 mJ
Applications
s Solenoid Driver
s DC Motor Driver
Available Packages
IRSF3031L
(SOT-223)
IRSF3031
(TO-220AB)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (T_c = 25°C unless
otherwise specified.)
Minimum Maximum Units
Vds, max Continuous Drain to Source Voltage
Vin, max Continuous Input Voltage
—
50
V
0
8
Ids
Continuous Drain Current
— self limited
Pd
Power Dissipation
—
30
W
EAS
Unclamped Single Pulse Inductive Energy
—
200
mJ
Vesd1 Electrostatic Discharge Voltage (Human Body Model) —
4000
V
Vesd2 Electrostatic Discharge Voltage (Machine Model)
—
1000
T_Jop
Operating Junction Temperature Range
T_Stg
Storage Temperature Range
T_L
Lead Temperature (Soldering, 10 seconds)
-40
150
-40
150
°C
—
300
Test Conditions
Tc ≤ 25°C
1000pF. 1.5kΩ
200pF, 0Ω
To Order