 English |
|
|
|
|
|
|
|
| IRSF3011 Datasheet, PDF (1/12 Pages) International Rectifier – FULLY PROTECTED POWER MOSFET SWITCH(Vds=50V, Rds(on)=200mohm) | |||
| |||
|
Previous Datasheet
Index
Next Data Sheet
Data Sheet No.PD 6.039B
IRSF3011
FULLY PROTECTED POWER MOSFET SWITCH
Features
· Extremely Rugged for Harsh Operating Environments
· Over-Temperature Protection
· Over-Current Protection
· Active Drain-to-Source Clamp
· ESD Protection
· Compatible with Standard Power MOSFET
· Low Operating Input Current
· Monolithic Construction
Vds(clamp)
Rds(on)
Ids(sd)
Tj(sd)
EAS
50V
200mâ¦
5A
155°C
200mJ
Description
The IRSF3011 is a three-terminal monolithic Smart Power MOSFET
with built-in short circuit, over-temperature, ESD and over-voltage pro-
tections.
The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 7A or the junction temperature exceeds 165°C
and keeps it off until the input is driven low. The drain-to-source voltage
is actively clamped at 55V (typical), prior to the avalanche of POWER
MOSFET, thus improving its performance during turn-off with inductive
loads.
The input current requirements are very low (300µA) which makes the
IRSF3011 compatible with most existing designs based on standard
power MOSFETs.
Applications
· Solenoid Driver
· DC Motor Driver
Available Packages
IRSF3011L
(SOT-223)
IRSF3011
(TO-220AB)
IRSF3011 Block Diagram
To Order
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese