IRS2509SPBF_15 Datasheet, PDF (1/21 Pages) International Rectifier – HALF-BRIDGE DRIVER

Features
 600V half-bridge driver
 Tolerant to negative transient voltages
 Gate drive supply range from 10 V to 20 V
 Under-voltage lock-out for both channels
 3.3 V, 5 V and 15 V input logic compatible
 Cross-conduction prevention logic
 Matched propagation delay for both channels
 High side output in phase with IN input
 Internal 530 ns dead-time
 Lower di/dt gate driver for better noise immunity
 Shut down input turns off both channels
 RoHS compliant
November 15, 2010
IRS2509SPbF
HALF-BRIDGE DRIVER
Packages
8-Lead SOIC
Product Summary
V_OFFSET
I_O+/-
V_OUT
t_on/off (typ.)
Dead Time
600 V max.
120 mA / 250 mA
10 V – 20 V
750 ns & 200 ns
530 ns
Description
The IRS2509 is a high-voltage, high-speed power MOSFET
and IGBT half-bridge driver with independent high and low
side referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable a ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3 V. The output drivers
feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600V.
Typical Connection
Applications:
*HID Electronic Ballasts