IRS2106 Datasheet, PDF (1/25 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER

PRELIMINARY
Data Sheet No. PD60246 revB
IRS2106/IRS21064(S)PbF
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Matched propagation delay for both channels
• Logic and power ground +/- 5 V offset.
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs (IRS2106)
Packages
8-Lead SOIC
14-Lead PDIP
14-Lead SOIC
8-Lead PDIP
Description
The IRS2106/IRS21064 are high
voltage, high speed power MOSFET
and IGBT drivers with independent
Feature Comparison
Cross-
Part
Input
logic
conduction
prevention
Dead-Time
Ground Pins Ton/Toff
high and low side referenced output
channels. Proprietary HVIC and
latch immune CMOS technologies
enable ruggedized monolithic con-
2106/2301
21064
2108
21084
HIN/LIN
HIN/LIN
logic
no
yes
none
Internal 540ns
Programmable 0.54~5 µs
COM
VSS/COM
COM
VSS/COM
220/200
220/200
struction. The logic input is
compatible with standard CMOS or
LSTTL output, down to 3.3 V logic.
2109/2302
21094
2304
IN/SD
HIN/LIN
yes
Internal 540ns
COM
Programmable 0.54~5 µs VSS/COM
yes
Internal 100ns
COM
750/200
160/140
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration
which operates up to 600 V.
Typical Connection
V_CC
V_CC
V_B
HIN
HIN
HO
LIN
LIN
V_S
COM
LO
IRS2106
up to 600 V
TO
LOAD
up to 600 V
V_CC
HIN
(Refer to Lead Assignments for correct pin ^LIN
configuration). These diagrams show electri-
cal connections only. Please refer to our
Application Notes and DesignTips for proper
V_SS
circuit board layout.
HO
V_CC
V_B
HIN
V_S
LIN
V_SS
COM
LO
IRS21064
TO
LOAD
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