IRS2011PBF Datasheet, PDF (1/19 Pages) International Rectifier – HIGH AND LOW SIDE DRIVER

Data Sheet No.PD60221
IRS2011(S)PbF
Features
HIGH AND LOW SIDE DRIVER
• Floating channel designed for bootstrap operation ^{Product Summary}
• Fully operational up to +200 V
• Tolerant to negative transient voltage, dV/dt immune
V_OFFSET
200 V max.
• Gate drive supply range from 10 V to 20 V
• Independent low-side and high-side channels
• Input logic HIN/LIN active high
I_O+/-
1.0 A /1.0 A typ.
• Undervoltage lockout for both channels
• 3.3 V and 5 V input logic compatible
V_OUT
10 V - 20 V
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
t_on/off
60 ns typ.
• RoHS compliant
Applications
Delay Matching 20 ns max.
• Audio Class D amplifiers
• High power DC-DC SMPS converters
• DC motor drive
Packages
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low-side referenced output
channels, ideal for Audio Class D and DC-DC converter appli-
IRS2011
IRS2011S
cations. Logic inputs are compatible with standard CMOS or
8-Lead PDIP
8-Lead SOIC
LSTTL output, down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200 V
HIN
LIN
COM
5
HIN
LIN
COM
8 _LO
V_S ⁴
HO
V_B
1
V_CC
TO
LOAD
V_CC
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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