IRLZ44ZPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Advnaced Process Technology

PD - 95539A
IRLZ44ZPbF
IRLZ44ZSPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
IRLZ44ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 13.5mΩ
G
I_D = 51A
S
TO-220AB
IRLZ44ZPbF
D²Pak
TO-262
IRLZ44ZSPbF IRLZ44ZLPbF
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
k Junction-to-Case
R_θCS
ik Case-to-Sink, Flat Greased Surface
R_θJA
ik Junction-to-Ambient
R_θJA
jk Junction-to-Ambient (PCB Mount)
Max.
51
36
204
80
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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1
10/01/10