IRLS3036-7PPBF_10 Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET

PD -97148A
IRLS3036-7PPbF
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET^® Power MOSFET
D
V_DSS
60V
R_DS(on) typ.
1.5m:
max. 1.9m:
I_{D (Silicon Limited)}
300Ac
S
I_{D (Package Limited)}
240A
D
S
SS
S
S
G
D²Pak 7 Pin
G
G ate
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Package Limited)
I_DM
Pulsed Drain Current d
P_D @T_C = 25°C Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case kl
R_θJA
Junction-to-Ambient (PCB Mount, steady state) j
www.irf.com
D
Drain
S
Source
Max.
300c
210
240
1000
380
2.5
± 16
8.1
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
300
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
mJ
A
mJ
Units
°C/W
1
10/28/10