IRLS3034-7PPBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 97362
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low R_DS(ON) at 4.5V V_GS
l Superior R*Q at 4.5V V_GS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRLS3034-7PPbF
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
40V
1.0mΩ
1.4mΩ
I_{D (Silicon Limited)} 380Ac
S ^ID _{(Package Limited)} ^240A
D
S
SS
S
S
G
D²Pak 7 Pin
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
P_D @T_C = 25°C _{Maximum Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
dv/dt
Peak Diode Recovery f
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
E_{AS (Thermally limited)} ^{Single Pulse Avalanche Energy e}
I_AR
Avalanche Current d
E_AR
Repetitive Avalanche Energy d
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case kl
R_θJA
Junction-to-Ambient j
Max.
380c
270c
240
1540
380
2.5
± 20
1.3
-55 to + 175
300
250
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
1/12/09