IRLR9343PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

DIGITAL AUDIO MOSFET
PD - 95386A
IRLR9343PbF
IRLU9343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low R_DSON for Improved Efficiency
l Low Q_g and Q_sw for Better THD and Improved
Efficiency
l Low Q_rr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU9343-701PbF
Key Parameters
V_DS
-55
V
R_DS(ON) typ. @ V_GS = -10V
93
m:
R_DS(ON) typ. @ V_GS = -4.5V
150
m:
Q_g typ.
31
nC
T_J max
175
°C
D
G
D-Pak
IRLR9343
I-Pak
IRLU9343
I-Pak Leadform 701
S
IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET^® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ -10V
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
P_D @T_C = 100°C
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
h Clamping Pressure
Thermal Resistance
R_θJC
R_θJA
R_θJA
g ^Parameter
Junction-to-Case
gj Junction-to-Ambient (PCB Mounted)
g Junction-to-Ambient (free air)
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through ‰ are on page 10
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1
12/07/04