IRLR8729PBF_09 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Maximum Power Dissipation
g Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θJA
gà ^{Junction-to-Case}
Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
V_DSS
30V
PD - 97352B
IRLR8729PbF
IRLU8729PbF
HEXFET^® Power MOSFET
R_DS(on) max Qg
8.9mΩ
10nC
D
S
S
D
G
G
D-Pak
I-Pak
IRLR8729PbF IRLU8729PbF
G
Gate
D
Drain
S
Source
Max.
30
± 20
58f
41f
260
55
27
0.37
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Typ.
–––
–––
–––
Max.
2.73
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through … are on page 11
www.irf.com
1
11/23/09