IRLR8503TRR Datasheet, PDF (1/9 Pages) International Rectifier – N-Channel Application-Specific MOSFET

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IRLR8503
• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% R_G Tested
HEXFET^® MOSFET for DC-DC Converters
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Description
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This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
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D-Pak
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including R_DS(on), gate charge and Cdv/dt-
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q_sw & R_DS(on) for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
DEVICE RATINGS (MAX. Values)
V_DS
R_DS(on)
Q_G
Q_SW
Q_OSS
IRLR8503
30V
18 mΩ
20 nC
8 nC
29.5 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
™ Pulsed Drain Current
T_C = 25°C
T_C = 90°C
Power Dissipation gÃÃÃÃÃÃÃÃÃÃÃTC = 25°C
T_C = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™ Pulsed Source Current
Thermal Resistance
Parameter
eÃh Maximum Junction-to-Ambient
h Maximum Junction-to-Lead
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J , T_STG
I_S
I_SM
Symbol
R_θJA
R_θJL
www.irf.com
IRLR8503
30
±20
44
32
196
62
30
-55 to 150
15
196
Units
V
A
W
°C
A
Typ
Max
Units
–––
50
°C/W
–––
2.0
1
5/26/05