IRLR8503PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

IRLR850^P3^D-P⁹⁵b⁰⁹F^5A
IRLR8503PbF
• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current
applications
• Lead-Free
HEXFET^® MOSFET for DC-DC Converters
D
Description
This new device employs advanced HEXFET Power
G
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
S
D-Pak
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including R_DS(on), gate charge and Cdv/dt-
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q_sw & R_DS(on) for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
DEVICE RATINGS (MAX. Values)
IRLR8503PbF
V_DS
R_DS(on)
Q_G
Q_sw
Q_oss
30V
18 mΩ
20 nC
8 nC
29.5 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V_GS ≥ 10V)…
Pulsed Drain Current
T_C = 25°C
T_C = 90°C
Power Dissipation…
T_C = 25°C
T_C = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current 
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
Symbol
V_DS
V
GS
I_D
I_DM
P_D
T_J, T_STG
I_S
I_SM
Symbol
R_θJA
R_θJL
IRLR8503
30
±20
44
32
196
62
30
–55 to 150
15
196
Max.
50
2.0
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
12/06/04