IRLR8256PBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96208
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l RoHS compliant
V_DSS
25V
IRLR8256PbF
IRLU8256PbF
HEXFET^® Power MOSFET
R_DS(on) max Qg
5.7m:
10nC
D
S
S
D
G
G
D-Pak
I-Pak
IRLR8256PbF IRLU8256PbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Maximum Power Dissipation
g Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
25
± 20
81f
57f
325
63
31
0.42
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Thermal Resistance
R_θJC
R_θJA
h^Parameter
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
2.4
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 11
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1
12/19/08