IRLR8203 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 94404
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
V_DSS
30V
IRLR8203
IRLU8203
HEXFET^® Power MOSFET
R_DS(on) max
I_D
6.8mΩ
110A^„
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V V_GS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8203
I-Pak
IRLU8203
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
T_J , T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
110 „
76 „
120
140
69
0.92
-55 to + 175
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.09
50
110
Units
V
V
A
W
W
W/°C
°C
Units
°C/W
Notes  through „ are on page 10
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1
03/12/02