IRLR8103V Datasheet, PDF (1/8 Pages) International Rectifier – N-Channel Application-Specific MOSFETs

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
• 100% R Tested
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R_DS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q & R for reduced losses in both control and
sw
DS(on)
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
PD-94021C
IRLR8103V
D
G
D-Pak
S
DEVICE CHARACTERISTICS…
R_DS(on)
Q_G
Q_SW
Q_OSS
IRLR8103V
7.9 mΩ
27 nC
12 nC
29nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
TC = 25°C
(V_GS > 10V)
™ Pulsed Drain Current
TC= 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃTC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™ Pulsed Source Current
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J , T_STG
I_S
I_SM
Thermal Resistance
Parameter
eh Maximum Junction-to-Ambient
h Maximum Junction-to-Case
www.irf.com
Symbol
R_θJA
R_θJC
IRLR8103V
30
±20
91
63
363
115
60
-55 to 150
91
363
Units
V
A
W
°C
A
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
1
10/22/04