IRLR7821PBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95091B
IRLR7821PbF
IRLU7821PbF
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
30V
10m: 10nC
D-Pak
I-Pak
IRLR7821PbF IRLU7821PbF
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
30
± 20
65f
47f
260
75
37.5
0.50
-55 to + 175
Units
V
A
W
W/°C
°C
Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
1
10/02/06