IRLR7807Z Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET

Applications
High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
Very Low RDS(on) at 4.5V V_GS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
PD - 94662
IRLR7807Z
IRLU7807Z
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg (typ.)
30V 13.8mΩ 7.0nC
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient (PCB Mount)
R_θJA
Junction-to-Ambient
Notes through are on page 11
www.irf.com
D-Pak
IRLR7807Z
I-Pak
IRLU7807Z
Max.
30
± 20
43
30
170
40
20
0.27
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
3.75
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
4/7/03