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IRLR3915 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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PD - 94543
AUTOMOTIVE MOSFET
IRLR3915
IRLU3915
Features
â Advanced Process Technology
â Ultra Low On-Resistance
â 175°C Operating Temperature
â Fast Switching
â Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this product are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 14mâ¦
ID = 30A
S
D-Pak
IRLR3915
I-Pak
IRLU3915
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (6 sigma)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Single Pulse Avalanche Energy Tested ValueÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
61
43
30
240
120
0.77
± 16
200
600
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)Â
Junction-to-Ambientâââ
Typ.
âââ
âââ
110
Max.
1.3
50
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
09/06/02
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