IRLR3802TRPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET

Power MOSFET

Applications
l High Frequency 3.3V and 5V input Point-
of-Load Synchronous Buck Converters
l Power Management for Netcom,
Computing and Portable Applications.
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low R_DS(on)
l Fully Characterized Avalanche Voltage
and Current
PD - 95089A
IRLR3802PbF
IRLU3802PbF
HEXFET^® Power MOSFET
V_DSS
12V
R_DS(on) max
8.5mΩ
Q_g
27nC
D-Pak
IRLR3802
I-Pak
IRLU3802
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
T_J , T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
84 „
60„
320
88
44
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Notes  through „ are on page 9
www.irf.com
Typ.
–––
–––
–––
Max.
1.7
40
110
Units
°C/W
1
12/7/04