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IRLR3715ZCPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 96053
IRLR3715ZCPbF
IRLU3715ZCPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V
11m: 7.2nC
D-Pak
I-Pak
IRLR3715ZCPbF IRLU3715ZCPbF
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™ Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
Max.
20
± 20
49f
35f
200
40
20
0.27
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
3.75
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
02/23/06